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"Thermal Annealing Characteristics of Si and Mg-implanted GaN Thin Films." Applied Physics Letters 68.19 (1995) 2702-2704. LBL-37372..
"The Influence of Nitrogen Ion Energy on the Quality of GaN Films Grown with Molecular Beam Epitaxy." Journal of Electronic Materials 24.4 (1995) 249-255. LBL-37223..
"Comparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy." Materials Research Society. Vol. 300. San Francisco, CA, 1993. LBL-35660..