Comparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy

Publication Type

Conference Paper

Date Published

04/1993

LBNL Report Number

LBL-35660

Abstract

Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AlN/(0001) Al2O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AlN/(0001) Al2O3 films as grown by both deposition methods revealed a decrease in sub-band gap absorption with increased substrate temperature.

Conference Name

Materials Research Society

Year of Publication

1993

Conference Location

San Francisco, CA

Other Numbers

UC-400