Fundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy

Publication Type

Conference Paper

LBNL Report Number

LBL-37296

Abstract

Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.

Year of Publication

1994

Call Number

LBL-37296