Single Crystal Wurtzite GaN on (111) GaAs with AIN Buffer Layers Grown by Reactive Magnetron Sputter Deposition

Publication Type

Journal Article

Date Published

10/1993

LBNL Report Number

LBL-33362

Abstract

We report the growth conditions necessary for highly oriented wurtzite GaN films on (111) GaAs, and single crystal GaN films on (111) GaAs using AIN buffer layers. The GaN films and AlN buffers are grown using rf reactive magnetron sputter deposition. Oriented basal plane wurtzite GaN is obtained on (111) GaAs at temperatures between 550-620 °C. However, using a high temperature 200 Å AIN buffer layer epitaxial GaN is produced. Crystal structure and quality is measured using x-ray diffraction (XRD), reflection electron diffraction (RED), and a scanning electron microscope (SEM). This is the first report of single crystal wurtzite GaN on (111) GaAs using AlN buffer layers by any growth technique. Simple AlN/GaN heterostructures grown by rf reactive sputter deposition on (111) GaAs are also demonstrated.

Journal

Journal of Materials Research

Volume

8

Year of Publication

1991
2613

Issue

10

Pagination

2613-2616