Thermal Annealing Characteristics of Si and Mg-implanted GaN Thin Films

Publication Type

Journal Article

Date Published

03/1996

LBNL Report Number

LBL-37372

Abstract

In this letter, we report the results of ion implantation of GaN using 28Si and 23Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 30 keV10^14 cm-2 Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690 °C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties.

Journal

Applied Physics Letters

Volume

68

Year of Publication

1995

Issue

19
2702

Pagination

2702-2704

ISSN

0003-6951