Publications

X Author: Nathan Newman X Term: BTUS Windows and Daylighting

1995

Chan, James S, Nathan W Cheung, Lawrence F Schloss, Erin C Jones, William S Wong, Nathan Newman, Xiaohong Liu, Eicke R Weber, A Gassman, and Michael D Rubin."Thermal Annealing Characteristics of Si and Mg-implanted GaN Thin Films."Applied Physics Letters 68.19 (1995) 2702-2704. DOI
Fu, T.C, Nathan Newman, Erin C Jones, James S Chan, Xiaohong Liu, Michael D Rubin, Nathan W Cheung, and Eicke R Weber."The Influence of Nitrogen Ion Energy on the Quality of GaN Films Grown with Molecular Beam Epitaxy."Journal of Electronic Materials 24.4 (1995) 249-255. DOI

1994

Newman, Nathan, T.C Fu, Z Liu, Zuzanna Liliental-Weber, Michael D Rubin, James S Chan, Erin C Jones, Jennifer T Ross, Ian M Tidswell, Kin Man Yu, Nathan W Cheung, and Eicke R Weber."Fundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy." (1994).

1993

Chan, James S, T.C Fu, Nathan W Cheung, Jennifer T Ross, Nathan Newman, and Michael D Rubin."Comparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy."Materials Research Society 300 (1993).
Ross, Jennifer T, Michael D Rubin, X Yao, Nathan Newman, and Amy Moll."Ion Implantation of Mg and C into GaN Films Grown by Ion-Assisted MBE." (1993).
Rubin, Michael D, Nathan Newman, James S Chan, T.C Fu, and Jennifer T Ross."P-Type Gallium Nitride by Reactive Ion-Beam Molecular Beam Epitaxy with Ion Implantation, Diffusion or Coevaporation of Mg."Applied Physics Letters 64.1 (1993) 64-66. DOI

1992

Newman, Nathan, Jennifer T Ross, and Michael D Rubin."Thermodynamic and Kinetic Processes Involved in the Growth of Epitaxial GaN Thin Films."Applied Physics Letters 62 (1992) 1242.